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FDD3682
September 2002
FDD3682
N-Channel PowerTrench(R) MOSFET 100V, 32A, 36m
Features
* r DS(ON) = 32m (Typ.), VGS = 10V, ID = 32A * Qg(tot) = 18.5nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Formerly developmental type 82755
Applications
* DC/DC converters and Off-Line UPS * Distributed Power Architectures and VRMs * Primary Switch for 24V and 48V Systems * High Voltage Synchronous Rectifier * Direct Injection / Diesel Injection System * 42V Automotive Load Control * Electronic Valve Train System
DRAIN (FLANGE) GATE SOURCE
D
G
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings TC = 25C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R JA = 52oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 32 23 5.5 Figure 4 55 95 0.63 -55 to 175 A A A A mJ W W/oC
oC
Ratings 100 20
Units V V
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.58 100 52
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Package Marking and Ordering Information
Device Marking FDD3682 Device FDD3682 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units
Electrical Characteristics TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 80V VGS = 0V VGS = 20V TC = 150oC 100 1 250 100 V A nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage V GS = VDS, ID = 250A ID = 32A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 16A, VGS = 6V ID = 32A, VGS = 10V, TC = 175oC 2 0.032 0.040 0.080 4 0.036 0.060 0.090 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 50V ID = 32A Ig = 1.0mA 1250 190 45 18.5 2.4 6.5 4.1 4.6 28 3.6 pF pF pF nC nC nC nC nC
Resistive Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 50V, ID = 32A VGS = 10V, RGS = 16 9 46 24 26 83 75 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 32A ISD = 16A ISD = 32A, dISD/dt = 100A/s ISD = 32A, dISD/dt = 100A/s 1.25 1.0 55 92 V V ns nC
Notes: 1: Starting TJ = 25C, L = 0.27mH, IAS = 20A.
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics TC = 25C unless otherwise noted
1.2 35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) VGS = 10V
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 ZJC, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
PDM 0.1 t1 t2 SINGLE PULSE 0.01 10 -5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x R JC + TC
Figure 3. Normalized Maximum Transient Thermal Impedance
400 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150
VGS = 10V 100
30 10-5 10-4 10-3 10-2 t, PULSE WIDTH (s) 10-1 100 101
Figure 4. Peak Current Capability
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics TC = 25C unless otherwise noted
200 100 100s ID, DRAIN CURRENT (A) 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25 oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 200 1 0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 DC 10ms 10s IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC 10
STARTING TJ = 150oC
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching Capability
80
80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V 60
VGS = 20V ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 6V VGS = 10V
ID, DRAIN CURRENT (A)
60
40 TJ = 175o C TJ = 25o C TJ = -55oC
40
20
20 VGS = 5V
0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS , GATE TO SOURCE VOLTAGE (V)
0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
60 DRAIN TO SOURCE ON RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX 50 VGS = 6V
Figure 8. Saturation Characteristics
3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.5
2.0
40 VGS = 10V 30
1.5
1.0 VGS = 10V, ID =32A
20 0 5 10 15 20 25 30 35 Id, DRAIN CURRENT (A)
0.5 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Drain to Source On Resistance vs Drain Current
Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Typical Characteristics TC = 25C unless otherwise noted
1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.0 1.2 ID = 250A
1.1
0.8
1.0
0.6
0.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (o C)
0.9 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (o C)
Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature
2000 1000 C, CAPACITANCE (pF) COSS CDS + CGD
Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature
10 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 50V 8
CISS = CGS + CGD
6
CRSS = CGD 100
4
2
VGS = 0V, f = 1MHz 20 0.1 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V)
WAVEFORMS IN DESCENDING ORDER: ID = 32A ID = 16A 0 5 10 Qg, GATE CHARGE (nC) 15 20
0
Figure 13. Capacitance vs Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate Currents
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Test Circuits and Waveforms
VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG VDD
+
BVDSS
VDS
VDD
IAS 0.01
0 tAV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
VDS
VDD
Qg(TOT) VDS
L VGS = 10V VGS
+
VDD DUT Ig(REF) 0 Qg(TH)
VGS VGS = 2V Qgs2 Qgs Ig(REF) 0 Qgd
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
VDS
tON td(ON) RL VDS 90% tr
tOFF td(OFF) tf 90%
VGS
+
VDD DUT 0
10%
10%
90% VGS 50% PULSE WIDTH 50%
RGS
VGS
0
10%
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, TJM , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM , in an application. Therefore the application's ambient temperature, TA (oC), and thermal resistance RJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.
(T -T ) JM A P D M = ----------------------------R JA
125 RJA = 33.32+ 23.84/(0.268+Area) EQ.2 100 RJA (oC/W) RJA = 33.32+ 154/(1.73+Area) EQ.3
75
(EQ. 1)
50
In using surface mount devices such as the TO-252 package, the environment in which it is applied will have a significant influence on the part's current and maximum power dissipation ratings. Precise determination of P DM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Fairchild provides thermal information to assist the designer's preliminary application evaluation. Figure 21 defines the RJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeter square. The area, in square inches or square centimeters is the top copper area including the gate and source pads. R JA
25 0.01 (0.0645)
0.1 (0.645)
1 (6.45)
10 (64.5)
AREA, TOP COPPER AREA in2 (cm 2)
Figure 21. Thermal Resistance vs Mounting Pad Area
= 33.32 + ------------------------------------
23.84 ( 0.268 + Area )
(EQ. 2)
Area in Inches Squared
R
JA
= 33.32 + ---------------------------------
154 ( 1.73 + Area )
(EQ. 3)
Area in Centimeters Squared
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
PSPICE Electrical Model
.SUBCKT FDD3682 2 1 3 ; Ca 12 8 4e-10 Cb 15 14 6e-10 Cin 6 8 1.22e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 11 7 17 18 112 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 Lgate 1 9 4.88e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2.24e-9 RLgate 1 9 48.8 RLdrain 2 5 10 RLsource 3 7 22.4 Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMOD Mweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1 Rdrain 50 16 RdrainMOD 10.5e-3 Rgate 9 20 1.8 RSLC1 5 51 RSLCMOD 1.0e-6 RSLC2 5 50 1.0e3 Rsource 8 7 RsourceMOD 11.9e-3 Rvthres 22 8 RvthresMOD 1 Rvtemp 18 19 RvtempMOD 1 S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMOD Vbat 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*70),2.5))} .MODEL DbodyMOD D (IS=2.4E-12 RS=4.4e-3 TRS1=2.0e-3 TRS2=4.5e-7 + CJO=9e-10 M=0.58 TT=2.9e-8 XTI=4.0) .MODEL DbreakMOD D (RS=0.6 TRS1=1.4e-3 TRS2=-5.0e-5) .MODEL DplcapMOD D (CJO=2.75e-10 IS=1.0e-30 N=10 M=0.56) .MODEL MstroMOD NMOS (VTO=4.16 KP=32 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL MmedMOD NMOS (VTO=3.48 KP=2.7 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.8) .MODEL MweakMOD NMOS (VTO=2.96 KP=0.068 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=18 RS=0.1) .MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-1.1e-8) .MODEL RdrainMOD RES (TC1=1.5e-2 TC2=4e-5) .MODEL RSLCMOD RES (TC1=3.0e-3 TC2=2.9e-6) .MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6) .MODEL RvthresMOD RES (TC1=-3.9e-3 TC2=-1.4e-5) .MODEL RvtempMOD RES (TC1=-3.5e-3 TC2=1.3e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-2.0) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=-5.0) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.4 VOFF=0.3) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.4) .ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
GATE 1 RLGATE CIN
rev Jun 2002
LDRAIN DPLCAP 10 RSLC1 51 ESLC 50 RDRAIN EVTHRES + 19 8 6 MSTRO LSOURCE 8 RSOURCE S1A 12 13 8 S1B CA 13 + EGS 6 8 EDS S2A 14 13 S2B CB + 5 8 8 RVTHRES 14 IT 15 17 RBREAK 18 RVTEMP 19 VBAT + 22 7 RLSOURCE SOURCE 3 21 16 RLDRAIN DBREAK 11 + 17 EBREAK 18 MWEAK MMED 5 DRAIN 2
RSLC2
5 51 ESG + LGATE EVTEMP RGATE + 18 22 9 20 6 8 -
(c)2002 Fairchild Semiconductor Corporation
+
DBODY
FDD3682 Rev. B
FDD3682
SABER Electrical Model
REV Jun 2002 template FDD3682 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2.4e-12,rs=4.4e-3,trs1=2.0e-3,trs2=4.5e-7,cjo=9e-10,m=0.58,tt=2.9e-8,xti=4.0) dp..model dbreakmod = (rs=0.6,trs1=1.4e-3,trs2=-5e-5) dp..model dplcapmod = (cjo=2.7e-10,isl=10e-30,nl=10,m=0.56) m..model mstrongmod = (type=_n,vto=4.16,kp=32,is=1e-30, tox=1) m..model mmedmod = (type=_n,vto=3.48,kp=2.7,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=2.96,kp=0.068,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5,voff=-2) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-5) DPLCAP 5 sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.4,voff=0.3) 10 sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.4) RSLC1 c.ca n12 n8 = 4e-10 51 c.cb n15 n14 = 6e-10 RSLC2 c.cin n6 n8 = 1.22e-9
ISCL
LDRAIN DRAIN 2 RLDRAIN
dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod spe.ebreak n11 n7 n17 n18 = 112 spe.eds n14 n8 n5 n8 = 1 GATE spe.egs n13 n8 n6 n8 = 1 1 spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 i.it n8 n17 = 1 l.lgate n1 n9 = 4.88e-9 l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 2.24e-9 res.rlgate n1 n9 = 48.8 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 22.4
CA LGATE
ESG + EVTEMP RGATE + 18 22 9 20 6 6 8 EVTHRES + 19 8
50 RDRAIN 21 16
DBREAK 11 DBODY MWEAK MMED EBREAK + 17 18 -
RLGATE CIN
MSTRO 8
LSOURCE 7 RLSOURCE
SOURCE 3
RSOURCE S1A 12 S1B 13 + EGS 6 8 EDS 13 8 S2A 14 13 S2B CB + 5 8 8 RVTHRES 14 IT 15 17 RBREAK
18 RVTEMP 19 VBAT + 22
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-1.1e-8 res.rdrain n50 n16 = 10.5e-3, tc1=1.5e-2,tc2=4e-5 res.rgate n9 n20 = 1.8 res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=2.9e-6 res.rslc2 n5 n50 = 1.0e3 res.rsource n8 n7 = 11.9e-3, tc1=1e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-3.9e-3,tc2=-1.4e-5 res.rvtemp n18 n19 = 1, tc1=-3.5e-3,tc2=1.3e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/70))** 2.5)) } }
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
FDD3682
SPICE Thermal Model
REV 20 Jun 2002 FDD3682_JC TH TL CTHERM1 TH 6 1.6e-3 CTHERM2 6 5 4.5e-3 CTHERM3 5 4 5.0e-3 CTHERM4 4 3 8.0e-3 CTHERM5 3 2 8.2e-3 CTHERM6 2 TL 4.7e-2 RTHERM1 TH 6 3.3e-2 RTHERM2 6 5 7.9e-2 RTHERM3 5 4 9.5e-2 RTHERM4 4 3 1.4e-1 RTHERM5 3 2 2.9e-1 RTHERM6 2 TL 6.7e-1
th
JUNCTION
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
5
SABER Thermal Model
SABER thermal model FDD3682 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =1.6e-3 ctherm.ctherm2 6 5 =4.5e-3 ctherm.ctherm3 5 4 =5.0e-3 ctherm.ctherm4 4 3 =8.0e-3 ctherm.ctherm5 3 2 =8.2e-3 ctherm.ctherm6 2 tl =4.7e-2 rtherm.rtherm1 th 6 =3.3e-2 rtherm.rtherm2 6 5 =7.9e-2 rtherm.rtherm3 5 4 =9.5e-2 rtherm.rtherm4 4 3 =1.4e-1 rtherm.rtherm5 3 2 =2.9e-1 rtherm.rtherm6 2 tl =6.7e-1 }
RTHERM3 CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
(c)2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
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Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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